SK1015 Datasheet Download

Part No.:
SK1015
Download:
Download Datasheet
Description:
[10.0 Ampere Surface Mount Round Lead Schottky Barrier Rectifier Diodes]
File Size:
731 K
Page:
2 Pages
Logo:
Manufacturer:
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
PCB Prototype
 SK1015 Datasheet Page:2 
SK1035 thru SK1020
SK1035 thru SK1020
Pb Free Plating Product
Pb
10.0 Ampere Surface Mount Round Lead Schottky Barrier Rectifier Diodes
FEATURE
Standard MBR matured technology with high reliablity
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
OUTLINE
H
Unit:inch(millimeter)
Cathode Band
J
A
C
MECHANICAL DATA
Case:
HSMC/SMC-W Package
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode band
Mounting Position:
Any
Weight:
0.22 gram approximately
E
F
G
D
B
DIMENSIONS
DIM
A
B
C
D
E
F
G
H
J
INCHES
MIN
0
.200
0
.177
0
.002
---
0
.047
0
.168
0
.309
0
.239
0
.234
MAX
0
.214
0
.203
0
.005
0
.02
0.056
0
.179
0
.322
0
.243
0
.240
MM
MIN
5.08
4.70
0
.05
---
1.20
4.27
7.85
6.08
5.95
MAX
5.43
5.30
0
.13
0
.51
1.42
4.55
8.18
6.18
6.10
NOTE
APPLICATION
LED SMPS/Industrial power supply
HID ballast stabilizer
Telecommunication SMPS/LED street lamp
HSMC/SMC-W
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
=10A, T
J
=25℃
I
F
=10A, T
J
=125℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
V
F
1.0
0.70
0.57
I
R
dV/dt
R
θJC
T
J
T
STG
15
0.80
0.70
0.1
10
10000
17
- 55 to +150
- 55 to +175
o
SK
1035
35
24
35
SK
1045
45
31
45
SK
105
50
35
50
SK
106
60
42
60
10
20
SK
109
90
63
90
SK
1010
100
70
100
SK
1015
150
105
150
SK
1020
200
140
200
UNIT
V
V
V
A
A
A
150
0.5
0.85
0.71
6
1.05
-
A
V
mA
V/μs
C/W
o
C
o
C
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/