FFAF60UP60DN Datasheet Download

Part No.:
FFAF60UP60DN
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Download Datasheet
Description:
[60Amperes,600Volts Insulated Common Cathode Ultra Fast Recovery Rectifiers]
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5211 K
Page:
2 Pages
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Manufacturer:
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
PCB Prototype
 FFAF60UP60DN Datasheet Page:2 
FFAF60UP60DN
FFAF60UP60DN
TO-3PF(TO-3PML)
Pb
Pb Free Plating Product
60Amperes,600Volts Insulated Common Cathode Ultra Fast Recovery Rectifiers
APPLICATION
·
·
·
·
·
·
·
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
Anode
PRODUCT FEATURE
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
Internal Configuration
Base Backside
Cathode
Anode
GENERAL DESCRIPTION
FFAF60UP60DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
(Total device)
Single pulse forward current
(Total device)
Maximum repetitive forward current
Operating junction
Storage temperatures
Symbol
V
RRM
I
F(AV)
I
FSM
I
FRM
Tj
Tstg
Test Conditions
Tc =110°C
Tc =25°C
Square wave, 20kHZ
Values
600
60
480
120
175
-55 to +175
°C
°C
A
Units
V
Electrical characteristics (Ta=25°C unless otherwise specified)
Parameter
Breakdown voltage
Blocking voltage
Forward voltage
(Per Diode)
Reverse leakage
current(Per Diode)
Reverse recovery
time(Per Diode)
Symbol
V
BR
,
V
R
V
F
Test Conditions
I
R
=100µA
I
F
=30A
I
F
=30A, Tj =125°C
V
R
= V
RRM
I
R
Tj=150°C, V
R
=600V
I
F
=0.5A, I
R
=1A, I
RR
=0.25A
I
F
=1A,V
R
=30V, di/dt =200A/us
35
28
Min
600
1.30
1.05
1.60
1.40
20
200
45
35
µA
V
Typ.
Max.
Units
t
rr
ns
Thermal characteristics
Junction-to-Case
Paramter
Symbol
R
θJC
Typ
0.8
℃/W
Units
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/