CY7C1380D-167AXC Datasheet Download

Part No.:
CY7C1380D-167AXC
Download:
Download Datasheet
Description:
[18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM]
File Size:
1141 K
Page:
33 Pages
Logo:
Manufacturer:
CYPRESS [ CYPRESS SEMICONDUCTOR ]
PCB Prototype
 CY7C1380D-167AXC Datasheet Page:2CY7C1380D-167AXC Datasheet Page:3CY7C1380D-167AXC Datasheet Page:4CY7C1380D-167AXC Datasheet Page:5CY7C1380D-167AXC Datasheet Page:6CY7C1380D-167AXC Datasheet Page:7CY7C1380D-167AXC Datasheet Page:8CY7C1380D-167AXC Datasheet Page:9 
CY7C1380D, CY7C1382D
CY7C1380F, CY7C1382F
18-Mbit (512 K × 36/1 M × 18)
Pipelined SRAM
18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM
Features
Functional Description
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
SRAM integrates 524,288 × 36 and 1,048,576 × 18 SRAM cells
with advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive edge triggered clock
input (CLK). The synchronous inputs include all addresses, all
data inputs, address-pipelining chip enable (CE
1
),
depth-expansion chip enables (CE
2
and CE
3 [2]
), burst control
inputs (ADSC, ADSP, and ADV), write enables (BW
X
, and BWE),
and global write (GW). Asynchronous inputs include the output
enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when address strobe processor (ADSP) or address strobe
controller (ADSC) are active. Subsequent burst addresses can
be internally generated as they are controlled by the advance pin
(ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed write cycle.This part supports byte write
operations (see
and
for further details). Write cycles can be one to two or four bytes
wide as controlled by the byte write control inputs. GW when
active LOW causes all bytes to be written.
The
CY7C1380D/CY7C1382D/CY7C1380F/CY7C1382F
operates from a +3.3 V core power supply while all outputs
operate with a +2.5 or +3.3 V power supply. All inputs and
outputs are JEDEC-standard and JESD8-5-compatible.
Supports bus operation up to 250 MHz
Available speed grades are 250, 200, and 167 MHz
Registered inputs and outputs for pipelined operation
3.3 V core power supply
2.5 V or 3.3 V I/O power supply
Fast clock-to-output times
2.6 ns (for 250 MHz device)
Provides high performance 3-1-1-1 access rate
User selectable burst counter supporting Intel
Pentium
®
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
Single cycle chip deselect
CY7C1380D/CY7C1382D is available in JEDEC-standard
Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball
FPBGA package; CY7C1380F/CY7C1382F is available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non
Pb-free 119-ball BGA and 165-ball FPBGA package
IEEE 1149.1 JTAG-Compatible Boundary Scan
ZZ sleep mode option
Selection Guide
Description
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
250 MHz
2.6
350
70
200 MHz
3.0
300
70
167 MHz
3.4
275
70
Unit
ns
mA
mA
Notes
1. For best practices or recommendations, please refer to the Cypress application note AN1064,
SRAM System Design Guidelines
on
www.cypress.com.
2. CE
3,
CE
2
are for TQFP and 165 FPBGA packages only. 119 BGA is offered only in 1 chip enable.
Cypress Semiconductor Corporation
Document Number: 38-05543 Rev. *I
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 3, 2011