CY7C164-25PC Datasheet Download

Part No.:
CY7C164-25PC
Download:
Download Datasheet
Description:
[16K x 4 Static RAM]
File Size:
174 K
Page:
9 Pages
Logo:
Manufacturer:
CYPRESS [ CYPRESS SEMICONDUCTOR ]
PCB Prototype
 CY7C164-25PC Datasheet Page:2CY7C164-25PC Datasheet Page:3CY7C164-25PC Datasheet Page:4CY7C164-25PC Datasheet Page:5CY7C164-25PC Datasheet Page:6CY7C164-25PC Datasheet Page:7CY7C164-25PC Datasheet Page:8CY7C164-25PC Datasheet Page:9 
66
CY7C164
CY7C166
16K x 4 Static RAM
Features
High speed
— 15 ns
Output enable (OE) feature (CY7C166)
CMOS for optimum speed/power
Low active power
— 633 mW
Low standby power
— 110 mW
TTL-compatible inputs and outputs
Automatic power-down when deselected
three-state drivers. The CY7C166 has an active LOW Output
Enable (OE) feature. Both devices have an automatic power-
down feature, reducing the power consumption by 65% when
deselected.
Writing to the device is accomplished when the Chip Enable
(CE) and Write Enable (WE) inputs are both LOW (and the
Output Enable (OE) is LOW for the CY7C166). Data on the
four input/output pins (I/O
0
through I/O
3
) is written into the
memory location specified on the address pins (A
0
through
A
13
).
Reading the device is accomplished by taking Chip Enable
(CE) LOW (and OE LOW for CY7C166), while Write Enable
(WE) remains HIGH. Under these conditions the contents of
the memory location specified on the address pins will appear
on the four data I/O pins.
The I/O pins stay in a high-impedance state when Chip Enable
(CE) is HIGH (or Output Enable (OE) is HIGH for CY7C166).
A die coat is used to insure alpha immunity.
Functional Description
The CY7C164 and CY7C166 are high-performance CMOS
static RAMs organized as 16,384 by 4 bits. Easy memory ex-
pansion is provided by an active LOW Chip Enable (CE) and
Logic Block Diagram
Pin Configurations
DIP
Top View
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
CE
GND
1
2
3
4
5
6 7C164
7
8
9
10
11
22
21
20
19
18
17
16
15
14
13
12
V
CC
A
4
A
3
A
2
A
1
A
0
I/O
3
I/O
2
I/O
1
I/O
0
WE
C164–3
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
CE
NC
GND
SOJ
Top View
1
2
3
4
5
6 7C164
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
A
4
A
3
A
2
A
1
A
0
NC
I/O
3
I/O
2
I/O
1
I/O
0
WE
C164–2
INPUT BUFFER
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
ROW DECODER
I/O
3
I/O
2
I/O
1
I/O
0
SENSE AMPS
256 x 64 x 4
ARRAY
DIP/SOJ
Top View
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
CE
OE
GND
1
24
2
23
3
22
4
21
5
20
6 7C166 19
7
18
17
8
9
16
10
15
11
14
12
13
V
CC
A
4
A
3
A
2
A
1
A
0
NC
I/O
3
I/O
2
I/O
1
I/O
0
WE
C166–1
COLUMN
DECODER
A
0
A
9
A
10
A
11
A
12
A
13
POWER
DOWN
CE
WE
(OE)
(7C166 ONLY)
C164–4
]
Selection Guide
7C164-15
7C166-15
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
15
115
20
7C164-20
7C166-20
20
115
20
7C164-25
7C166-25
25
105
20
7C164-35
7C166-35
35
105
20
Cypress Semiconductor Corporation
Document #: 38-05025 Rev. **
3901 North First Street
San Jose
CA 95134 • 408-943-2600
Revised August 24, 2001