CY7C1049B-15VC Datasheet Download

Part No.:
CY7C1049B-15VC
Download:
Download Datasheet
Description:
[512K x 8 Static RAM]
File Size:
135 K
Page:
10 Pages
Logo:
Manufacturer:
CYPRESS [ CYPRESS SEMICONDUCTOR ]
PCB Prototype
 CY7C1049B-15VC Datasheet Page:2CY7C1049B-15VC Datasheet Page:3CY7C1049B-15VC Datasheet Page:4CY7C1049B-15VC Datasheet Page:5CY7C1049B-15VC Datasheet Page:6CY7C1049B-15VC Datasheet Page:7CY7C1049B-15VC Datasheet Page:8CY7C1049B-15VC Datasheet Page:9 
049B
CY7C1049B
512K x 8 Static RAM
Features
• High speed
— t
AA
= 12 ns
• Low active power
— 1320 mW (max.)
• Low CMOS standby power (Commercial L version)
— 2.75 mW (max.)
• 2.0V Data Retention (400
µW
at 2.0V retention)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
is provided by an active LOW Chip Enable (CE), an active
LOW Output Enable (OE), and three-state drivers. Writing to
the device is accomplished by taking Chip Enable (CE) and
Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O
0
through I/O
7
) is then written into the location specified on the
address pins (A
0
through A
18
).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1049B is available in a standard 400-mil-wide
36-pin SOJ package with center power and ground (revolu-
tionary) pinout.
Functional Description
[1]
The CY7C1049B is a high-performance CMOS static RAM or-
ganized as 524,288 words by 8 bits. Easy memory expansion
Logic Block Diagram
Pin Configuration
SOJ
Top View
A
0
A
1
A
2
A
3
A
4
CE
I/O
0
I/O
1
V
CC
GND
I/O
2
I/O3
WE
A
5
A
6
A
7
A
8
A
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A
18
A
17
A
16
A
15
OE
I/O
7
I/O
6
GND
V
CC
I/O
5
I/O
4
A
14
A
13
A
12
A
11
A
10
NC
I/O
0
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
I/O
1
ROW DECODER
I/O
2
SENSE AMPS
512K x 8
ARRAY
I/O
3
I/O
4
I/O
5
CE
WE
OE
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
Selection Guide
7C1049B-12 7C1049B-15 7C1049B-17 7C1049B-20
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby
Current (mA)
Com’l
Com’l/Ind’l L
Ind’l
12
240
8
-
-
15
220
8
-
-
17
195
8
0.5
-
20
185
8
0.5
9
7C1049B-25
25
180
8
0.5
9
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05169 Rev. *A
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
3901 North First Street
San Jose
CA 95134 • 408-943-2600
Revised September 13, 2002