4-Mbit (512K x 8) Static RAM
• Very high speed: 45 ns
— Wide voltage range: 2.20V – 3.60V
• Pin compatible with CY62148DV30
• Ultra low standby power
— Typical standby current: 1
— Maximum standby current: 7
• Ultra low active power
— Typical active current: 2 mA @ f = 1 MHz
Easy memory expansion with CE, and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Available in Pb-free 36-ball VFBGA, 32-pin TSOP II and
The CY62148EV30 is a high performance CMOS static RAM
organized as 512K words by 8 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life™ (MoBL
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption. Placing the device into standby
mode reduces power consumption by more than 99% when
deselected (CE HIGH). The eight input and output pins (IO
) are placed in a high impedance state when the
device is deselected (CE HIGH), the outputs are disabled (OE
HIGH), or during a write operation (CE LOW and WE LOW).
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. Data on the eight IO pins (IO
is then written into the location specified on the address pins
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins appear on the IO pins.
Logic Block Diagram
512K x 8
1. SOIC package is available only in 55 ns speed bin.
2. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at
Cypress Semiconductor Corporation
Document #: 38-05576 Rev. *F
198 Champion Court
Revised April 18, 2007